DocumentCode
1519320
Title
New methods for determining the void content of silicon single crystals
Author
Spaepen, Frans ; Eliat, Astrid
Author_Institution
Div. of Eng. & Appl. Sci., Harvard Univ., Cambridge, MA, USA
Volume
48
Issue
2
fYear
1999
fDate
4/1/1999 12:00:00 AM
Firstpage
230
Lastpage
232
Abstract
Two methods are proposed to determine upper limits to the total void volume in silicon single crystals. Both are based on the fast interstitial diffusion of metals (Cu, in particular) in Si. The first method is based on measuring the total area of the cavity walls by forming a metal monolayer on them. The second method is based on filling the cavities with silicide precipitates. These upper limits may be useful in assessing the uncertainties in the determination of the Avogadro constant from the molar volume of silicon
Keywords
crystals; interstitials; precipitation (physical chemistry); self-diffusion; silicon; vacancies (crystal); voids (solid); Avogadro constant determination; Cu diffusion; Si molar volume; Si single crystals; Si:Cu; fast interstitial diffusion; metal diffusion; metal monolayer formation; silicide precipitates; total void volume; void content determination; Area measurement; Copper; Crystals; Filling; Helium; Particle measurements; Silicon; Stacking; Temperature; Volume relaxation;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/19.769570
Filename
769570
Link To Document