A first attempt to realize (multiple-QHE devices)-series array resistance standards

Author

Piquemal, Francçis P M ; Blanchet, J. ; Genevès, Gérard ; André, J.P.

Author_Institution

BNM-LCIE, Fontenay-aux-Roses, France

Volume

48

Issue

2

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

296

Lastpage

300

Abstract

Several chips composed of ten quantum Hall effect (QHE) devices placed in series by triple connections have been fabricated. The results obtained on one of these first arrays of quantized Hall resistances (QHR) open the possibility to realize novel QHR standards. The QHR on the i=2 plateau, 10×R_H(i=2), was compared to R_H(i=2) from a standard type QHE sample acting as a reference. The comparison results agreed to within parts in 10⁹ for the measurements of a 1000 Ω standard resistance. This work followed preliminary tests on the multiple connection techniques. In particular, the QHR on the i=2 plateau of a special QHE sample allowing the auto-series configuration with a double connection was found equal to 2×R_H(i=2) within the total standard uncertainty of 4.4 parts in 10⁹

Keywords

electric resistance measurement; measurement standards; quantum Hall effect; 1000 ohm; multiple QHE device series array resistance standard; quantized Hall resistance; quantum Hall effect device; Charge carrier density; Contact resistance; Electric resistance; Electrical resistance measurement; Epitaxial growth; Gallium arsenide; Hall effect; Measurement standards; Testing; Voltage;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.769587

Filename

769587