Measurements of the ac longitudinal resistance of a GaAs-AlGaAs quantum Hall device

Author

Cabiati, Franco ; Callegaro, Luca ; Cassiago, Cristina ; D´Elia, Vincenzo ; Reedtz, Giancarlo Marullo

Author_Institution

Ist. Elettrotecnico Nazionale Galileo Ferraris, Torino, Italy

Volume

48

Issue

2

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

314

Lastpage

318

Abstract

The shape of the i=2 minimum of the ac longitudinal resistance R _x of a quantum Hall device has been obtained at different frequencies from 160 Hz to 16 kHz. The frequency dependence of the resistance and the virtual reactance, measured at the i=2 and i=4 plateau centers with different circuit conditions, have been analyzed. The measurements have been performed with a new system, which includes dedicated electronic units to maintain close to zero the voltage at the current measurement terminal of the device and the current at the voltage terminals. Within the validity of the equivalent circuit adopted to represent the quantum Hall device and the measuring system, R_x was found to follow an increasing function of frequency, in agreement with previous investigations

Keywords

III-V semiconductors; aluminium compounds; electric resistance measurement; equivalent circuits; gallium arsenide; quantum Hall effect; semiconductor heterojunctions; 160 Hz to 16 kHz; AC longitudinal resistance measurement; GaAs-AlGaAs; GaAs-AlGaAs quantum Hall device; equivalent circuit; frequency dependence; virtual reactance; Capacitance measurement; Current measurement; Electrical resistance measurement; Electrodes; Equivalent circuits; Frequency dependence; Frequency measurement; Impedance measurement; Shape measurement; Voltage measurement;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.769591

Filename

769591