Title :
MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
Author :
Debray, J.P. ; Sagnes, J. ; Le Roux, G. ; Legay, P. ; Quillec, M. ; Kazmierski, C. ; Madani, R. ; Palmier, J.F.
Author_Institution :
CNET, Bagneux, France
fDate :
7/1/1999 12:00:00 AM
Abstract :
The first demonstration of a one-step-growth vertical-cavity surface-emitting laser (VCSEL) at 1.56 μm by low-pressure metal-organic vapor phase epitaxy in the InGaAlAs (/spl lambda//sub gap/=1.43 μm)-InAlAs system lattice matched to InP is presented. The VCSEL´s threshold current density was 7.5 kA/cm2 and pulsed lasing had been obtained up to +55/spl deg/C for 45-μm diameter proton implanted devices. This material system represents a high potential for continuous-wave VCSELs at 1.55-μm wavelength using a simple approach for large-scale industrial production.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; ion implantation; laser beams; laser cavity resonators; optical fabrication; semiconductor doping; semiconductor growth; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth; 1.43 mum; 1.55 mum; 1.56 mum; 45 mum; 55 C; InGaAlAs-InAlAs; InGaAlAs-InAlAs system; InP; MOVPE growth; continuous-wave VCSELs; large-scale industrial production; lattice matched system; low-pressure metal-organic vapor phase epitaxy; monolithic VCSEL; one-step-growth vertical-cavity surface-emitting laser; proton implanted devices; pulsed lasing; threshold current density; Continuous production; Epitaxial growth; Epitaxial layers; Indium phosphide; Large-scale systems; Lattices; Protons; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
