Angled-facet S-bend semiconductor optical amplifiers for high-gain and large-extinction ratio

Author

Kitamura, S. ; Hatakeyama, H. ; Tamanuki, T. ; Sasaki, T. ; Komatsu, K. ; Yamaguchi, M.

Author_Institution

Div. of Compound Semicond. Device, NEC Corp., Kawasaki, Japan

Volume

11

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

788

Lastpage

790

Abstract

The extinction ratio of an optical gate with a spot-size-converter-integrated semiconductor optical amplifier (SSC-SOA) is deteriorated following the direct coupling of unguided light between the input and output fibers. An S-bend waveguide structure is introduced into an active waveguide to suppress such direct coupling. Angled facet structures are also introduced for obtaining low facet reflectivity. The fabricated SSC-SOA operating at 1.55-μm wavelength achieves an extinction ratio up to 70 dB and a fiber-to-fiber gain of 20 dB.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; optical fibre couplers; semiconductor laser arrays; semiconductor optical amplifiers; waveguide lasers; 1.55 mum; 20 dB; InGaAsP-InP; InGaAsP/InP; S-bend waveguide structure; active waveguide; angled facet structure; angled-facet S-bend semiconductor optical amplifiers; direct coupling; extinction ratio; fabrication; fiber-to-fiber gain; high-gain; input fibers; low facet reflectivity; optical gate; output fibers; semiconductor optical amplifiers; spot-size-converter-integrated semiconductor optical amplifier; unguided light; Extinction ratio; Optical arrays; Optical coupling; Optical crosstalk; Optical switches; Optical waveguides; Reflectivity; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.769708

Filename

769708