DocumentCode :
1520285
Title :
Current-induced guiding and beam steering in active semiconductor planar waveguide
Author :
Xuesong Dong ; LiKamWa, P. ; Loehr, J. ; Kaspi, R.
Author_Institution :
Sch. of Opt., Univ. of Central Florida, Orlando, FL, USA
Volume :
11
Issue :
7
fYear :
1999
fDate :
7/1/1999 12:00:00 AM
Firstpage :
809
Lastpage :
811
Abstract :
We propose a novel method of achieving beam steering in active GaAs-AlGaAs materials. Carrier-induced refractive index change effect is applied to form a channel waveguide in a slab structure. Current injection is used as a means to control, guide, and steer an optical beam between two active stripes. In a structure that was 710 μm long, we have experimentally demonstrated waveguiding of an externally coupled optical beam and electrically induced steering of the beam over a 17-μm lateral distance at the output facet. The results of theoretical analysis and modeling of the beam shift fit the experimental data well.
Keywords :
III-V semiconductors; aluminium compounds; beam steering; gallium arsenide; laser beams; optical planar waveguides; refractive index; semiconductor heterojunctions; 17 mum; 710 mum; GaAs-AlGaAs; GaAs-AlGaAs materials; active semiconductor planar waveguide; active stripes; beam shift; beam steering; carrier-induced refractive index change effect; channel waveguide; current injection; current-induced guiding; electrically induced steering; externally coupled optical beam; lateral distance; modeling; optical beam control; optical beam guiding; optical beam steering; output facet; slab structure; theoretical analysis; waveguiding; Beam steering; Optical beams; Optical control; Optical materials; Optical waveguides; Refractive index; Semiconductor materials; Semiconductor waveguides; Slabs; Waveguide transitions;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.769715
Filename :
769715
Link To Document :
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