• DocumentCode
    1520381
  • Title

    High-power diode lasers with small vertical beam divergence emitting at 808 nm

  • Author

    Wenzel, H. ; Bugge, F. ; Erbert, G. ; Hülsewede, R. ; Staske, R. ; Trankel, G.

  • Author_Institution
    Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
  • Volume
    37
  • Issue
    16
  • fYear
    2001
  • fDate
    8/2/2001 12:00:00 AM
  • Firstpage
    1024
  • Lastpage
    1026
  • Abstract
    A new waveguiding scheme for high-power diode lasers based on high-index quarter-wave reflecting layers inserted into the cladding layers is presented. For 808 nm lasers, a small vertical far-field angle of 18°, a low threshold current density of 280 A/cm2 and a high conversion efficiency of 50% are simultaneously obtained
  • Keywords
    laser beams; semiconductor lasers; waveguide lasers; 50 percent; 808 nm; cladding layer; conversion efficiency; far-field angle; high-index quarter-wave reflecting layer; high-power diode laser; threshold current density; vertical beam divergence; waveguide structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010712
  • Filename
    941809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1520381