Title :
Si Nanowire-Based Humidity Sensors Prepared on Glass Substrate
Author :
Hsueh, H.T. ; Hsueh, T.J. ; Chang, S.J. ; Hung, F.Y. ; Weng, W.Y. ; Hsu, C.L. ; Dai, B.T.
Author_Institution :
Inst. of Nanotechnol. & Microsyst. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The authors report the growth of Si nanowires on glass substrate by low-temperature vapor-liquid-solid process and the fabrication of Si nanowire-based humidity sensors. It was found that average length of Si nanowires decreased from 1.6 to 1 μm while the diameter of Si nanowires increased from 90 to 490 nm as we increased the initial Au catalytic layer thickness from 5 nm to 15 nm. It was also found that current measured from these Si nanowires decreased monotonically with RH. Furthermore, it was found that samples with a thinner Au layer thickness could provide a larger sensor response.
Keywords :
elemental semiconductors; humidity sensors; nanofabrication; nanosensors; nanowires; semiconductor growth; silicon; Si; SiO2; catalytic layer thickness; glass substrate; low-temperature vapor-liquid-solid process; nanowire-based humidity sensors; size 1.6 mum to 1 mum; size 90 nm to 490 nm; Current measurement; Gold; Humidity; Nanowires; Sensors; Silicon; Temperature measurement; Humidity sensor; silicon nanowires; vapor-liquid-solid process;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2011.2156781
