Title :
Guided elastic waves in GaN-on-sapphire
Author :
Camou, S. ; Pastureaud, Th ; Schenk, H.P.D. ; Ballandras, S. ; Laude, V.
Author_Institution :
Lab. de Phys. et Metrol. des Oscillateurs, CNRS, Besancon, France
fDate :
8/2/2001 12:00:00 AM
Abstract :
The use of GaN layers deposited on a sapphire substrate for high velocity surface acoustic wave excitation is investigated, in view of passive filtering applications. The measured modal behaviour is found to comply well with numerical simulations. The measured thermal sensitivity is found to be better than -32 ppm/K
Keywords :
III-V semiconductors; elastic waves; gallium compounds; piezoelectric semiconductors; sapphire; surface acoustic wave resonators; surface acoustic waves; wide band gap semiconductors; 10.6 mum; 390 to 770 MHz; Al2O3; BAW; GaN-Al2O3; GaN-on-sapphire; SAW filter; SAW resonator; guided elastic waves; high velocity surface acoustic wave excitation; modal behaviour; numerical simulations; passive filtering applications; sapphire substrate; thermal sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010668
