DocumentCode :
1520630
Title :
Room-Temperature Operation of Discrete-Mode InGaAs–AlAsSb Quantum-Cascade Laser With Emission at 
m
Author :
Phelan, Richard ; Slight, Thomas James ; Kelly, Brian ; O´Carroll, John ; McKee, Andrew ; Revin, Dmitry G. ; Zhang, Shiyong Y. ; Krysa, Andrey B. ; Kennedy, Kenneth L. ; Cockburn, John W. ; Ironside, Charlie N. ; Meredith, Wyn ; O´Gorman, James
Author_Institution :
Eblana Photonics Ltd., Dublin, Ireland
Volume :
22
Issue :
17
fYear :
2010
Firstpage :
1273
Lastpage :
1275
Abstract :
Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. For an uncoated 10-μ m-wide ridge waveguide and 3000-μm-long cavity, the laser had a threshold current density Jth of 4.2 kA·cm-2 (Ith=1.5 A) at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 μ m with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of 253 K <; T <; 303 K.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; quantum cascade lasers; InGaAs-AlAsSb-InP; discrete-mode quantum-cascade laser; materials system; sidemode suppression ratio; size 10 mum; size 3000 mum; temperature 253 K to 303 K; wavelength 3.3 mum; wide ridge waveguide; Etching; Gas lasers; Gratings; Laser stability; Laser tuning; Optical waveguides; Quantum cascade lasers; Space technology; Surface emitting lasers; Waveguide lasers; Midinfrared sources; quantum cascade laser; single-mode laser; surface grating;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2053529
Filename :
5491073
Link To Document :
