Title :
A Compact Analytical Threshold-Voltage Model for Surrounding-Gate MOSFETs With Interface Trapped Charges
Author :
Te-Kuang, Chiang
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
Abstract :
With the effects of equivalent oxide charges on flatband voltage, a compact analytical threshold-voltage model for surrounding-gate MOSFETs with interface trapped charges is developed based on the parabolic potential approach. The model shows how interface charge density, damaged zone, oxide thickness, and diameter of silicon body affect the threshold voltage. The model is verified by a 3-D device simulator and can be used to explore the hot-carrier-induced threshold-voltage behavior of surrounding-gate MOSFETs for its memory device application.
Keywords :
MOSFET; hot carriers; interface states; 3D device simulator; compact analytical threshold-voltage model; equivalent oxide charge effect; hot-carrier-induced threshold-voltage behavior; interface charge density; interface trapped charges; parabolic potential approach; surrounding-gate MOSFET; Hot-carrier-induced threshold voltage; surrounding-gate MOSFETs;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2051317
