DocumentCode
1520784
Title
Enhancing Electron-Emission Efficiency of MIM Tunneling Cathodes by Reducing Insulator Trap Density
Author
Suzuki, M. ; Sagawa, Masakazu ; Kusunoki, Takashi ; Nishimura, E. ; Ikeda, Makoto ; Tsuji, Keita
Author_Institution
Hitachi Research Laboratory, Hitachi, Ltd., Ibaraki, Japan
Volume
59
Issue
8
fYear
2012
Firstpage
2256
Lastpage
2262
Abstract
Metal–insulator–metal (MIM) tunneling cathodes demonstrate electron-emission efficiency
of 9
to 11
. This threefold increase in
from that previously reported is achieved by reducing trap density in the cathodes\´ insulator, thereby enabling tunneling electrons to accelerate with fewer scatterings in the insulator. Life tests show that the high
is maintained for a 19 000-h operation in sealed display panels containing a ZnS-based phosphor. The reduction of trap density also suppresses long-term drifts in emission and diode currents to a satisfactory level. These emission characteristics are sufficient for realizing a large-sized field-emission display with MIM cathodes. In addition, an effective method for measuring trap density in the insulator of MIM devices is devised. This method adopts low-stress
–
measurement following charge-injection stress. Measurement by this method reveals that trap density is proportional to neodymium concentration in the anodized insulator. The trap density is therefore reduced by lowering the neodymium content in the precursor Al–Nd alloy film. Moreover, the robustness of the MIM cathodes to charge-injection stress is demonstrated.
Keywords
Cathodes; Current measurement; Electron traps; Insulators; Neodymium; Tunneling; Displays; metal–insulator–metal (MIM) devices; trap measurement; tunneling cathode; vacuum microelectronics;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2012.2197625
Filename
6203398
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