DocumentCode :
1520941
Title :
Very low-distortion fully differential switched-current memory cell
Author :
Martins, Jorge M. ; Dias, Victor F.
Author_Institution :
IST, Tech. Univ. Lisbon, Portugal
Volume :
46
Issue :
5
fYear :
1999
fDate :
5/1/1999 12:00:00 AM
Firstpage :
640
Lastpage :
643
Abstract :
This paper proposes a very low-distortion fully differential switched-current memory cell, based on the opening of the memory switch at a constant voltage. We show that in the previously proposed single-ended Nairn cell, this principle does not lead to low harmonic distortion because the distortion is also a function of the signal-independent clock injection. SPICE simulations indicate that the proposed cell achieves a distortion level of -90 dB to -100 dB, which is about two orders of magnitude below the level achieved with basic switched-current cells. The performance of the proposed cell is near that of state-of-the-art switched-capacitor circuits
Keywords :
MOS memory circuits; SPICE; circuit simulation; electric distortion; harmonic distortion; switched current circuits; MOS memory circuits; SPICE simulations; distortion level; fully differential switched-current memory cell; harmonic distortion; memory switch; CMOS technology; Circuit simulation; Clocks; Feedback circuits; Harmonic distortion; SPICE; Switched capacitor circuits; Switches; Switching circuits; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
Publisher :
ieee
ISSN :
1057-7130
Type :
jour
DOI :
10.1109/82.769814
Filename :
769814
Link To Document :
بازگشت