• DocumentCode
    1521069
  • Title

    Power semiconductors: Fast, tough, and compact: MOS field-effect transistors and gate turnoff thyristors are bringing new levels of performance in switching frequencies and current and voltage ratings

  • Author

    Chen, Dan Y.

  • Author_Institution
    Virginia Polytechnic Institute and State University
  • Volume
    24
  • Issue
    9
  • fYear
    1987
  • Firstpage
    30
  • Lastpage
    35
  • Abstract
    The silicon-controlled rectifier (SCR) may not be on its way out, but it is certainly being challenged by a number of semiconductor devices. More efficient, easier to control, and switching faster than the SCR, they are replacing that old standby in a variety of applications.
  • Keywords
    Insulated gate bipolar transistors; Logic gates; Power MOSFET; Resistance; Thyristors; Transistors;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1987.6448932
  • Filename
    6448932