DocumentCode
1521069
Title
Power semiconductors: Fast, tough, and compact: MOS field-effect transistors and gate turnoff thyristors are bringing new levels of performance in switching frequencies and current and voltage ratings
Author
Chen, Dan Y.
Author_Institution
Virginia Polytechnic Institute and State University
Volume
24
Issue
9
fYear
1987
Firstpage
30
Lastpage
35
Abstract
The silicon-controlled rectifier (SCR) may not be on its way out, but it is certainly being challenged by a number of semiconductor devices. More efficient, easier to control, and switching faster than the SCR, they are replacing that old standby in a variety of applications.
Keywords
Insulated gate bipolar transistors; Logic gates; Power MOSFET; Resistance; Thyristors; Transistors;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.1987.6448932
Filename
6448932
Link To Document