A 5–5.8 GHz fully-integrated CMOS PA for WLAN applications

Author

Jeng-Han Tsai ; Hong-Wun Ou-Yang

Author_Institution

Dept. of Appl. Electron. Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan

fYear

2014

fDate

19-23 Jan. 2014

Firstpage

130

Lastpage

132

Abstract

A 5-5.8 GHz fully-integrated power amplifier is designed and fabricated in TSMC standard 0.18-μm 1P6M CMOS technology. Utilizing a two-way direct shunt combining technique with an odd mode suppression resistor, the CMOS PA achieves a measured maximum saturation output power (P_sat) of 23.1 dBm at 5.2 GHz. The measured output 1-dB compression point (OP1dB) is 18.6 dBm and peak power-added efficiency (PAE) is 19.8 % at 5.2 GHz. By using broadband power matching topology, the output power of the CMOS PA is 22.6 ± 0.5 dBm from 5 to 5.8 GHz.

Keywords

CMOS analogue integrated circuits; field effect MMIC; microwave power amplifiers; resistors; wireless LAN; TSMC standard 1P6M CMOS technology; WLAN applications; broadband power matching topology; frequency 5 GHz to 5.8 GHz; fully-integrated CMOS PA; odd mode suppression resistor; power added efficiency; power amplifier; size 0.18 mum; two-way direct shunt combining technique; CMOS integrated circuits; Inductors; Metals; OFDM; Power amplifiers; Power generation; Wireless LAN; CMOS technology; microwave amplifiers; power amplifiers; radio frequency integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium (RWS), 2014 IEEE

Conference_Location

Newport Beach, CA

Print_ISBN

978-1-4799-2298-7

Type

conf

DOI

10.1109/RWS.2014.6830155

Filename

6830155