DocumentCode :
1521168
Title :
Ion Beam (RBS) and XRF Analysis of Metal Contacts Deposited on CdZnTe and CdTe Crystals
Author :
Raulo, Adelaide ; Marchini, Laura ; Paternoster, Giovanni ; Perillo, Eugenio ; Paiano, Pasquale ; Mancini, Anna Maria ; Zha, Mingzheng ; Zappettini, Andrea
Author_Institution :
Dipt. di Sci. Fis., Univ. Federico II, Naples, Italy
Volume :
58
Issue :
4
fYear :
2011
Firstpage :
1964
Lastpage :
1971
Abstract :
Rutherford Backscattering Spectrometry (RBS) using 6 MeV alpha particles and X-Ray Fluorescence (XRF) with a Pd-anode X-Ray generator were performed to characterize Au and Pt contacts deposited by electroless technique and thermal evaporation on differently treated surfaces of CdZnTe and CdTe crystals. The aim of this study is to understand and improve the structure of the material-electrode interface. The thickness, the stoichiometry and the concentration profiles of platinum, gold, cadmium, zinc, tellurium and oxygen present at the surface layers were determined. The distribution of Cd deficiency at the interface layers was profiled using simulations and showed complex profiles in the samples, which can greatly affect the electrical quality of the detectors.
Keywords :
Rutherford backscattering; X-ray fluorescence analysis; cadmium compounds; electrodes; electroless deposition; gold; ion beam applications; platinum; semiconductor counters; stoichiometry; vacuum deposition; zinc compounds; CdTe-Au; CdTe-Pt; CdZnTe-Au; CdZnTe-Pt; Rutherford backscattering spectrometry; X-Ray fluorescence; XRF analysis; electroless technique; electron volt energy 6 MeV; ion beam analysis; material-electrode interface; metal contacts; stoichiometry; thermal evaporation; Crystals; Detectors; Electrodes; Face; Gold; Surface treatment; CdTe characterization; CdTe growth; CdZnTe characterization; CdZnTe detectors; CdZnTe growth; X-ray spectroscopy; defects; detectors; diffusion processes; ionizing radiation; particle beam measurements; semiconductor materials;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2011.2145001
Filename :
5771140
Link To Document :
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