A monolithic Si PCS-CDMA power amplifier with 30% PAE at 1.9 GHz using a novel biasing scheme

Author

Luo, Sifen ; Sowlati, Tirdad

Author_Institution

Philips Lab., Briarcliff Manor, NY, USA

Volume

49

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

1552

Lastpage

1557

Abstract

A monolithic Si personal-communication system-CDMA power amplifier (PA) capable of delivering 28.2-dBm output power with 30% power-added efficiency and -45-dBc adjacent-channel-power ratio at 1.9 GHz and 3.6-V supply voltage is presented for the first time in this paper. The PA implemented in a 30-GHz BiCMOS process incorporates a novel impedance-controllable biasing scheme to control the class of operation and bias impedance of the output stage. Both simulated and measured results are presented for comparison

Keywords

BiCMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; code division multiple access; mobile radio; 1.9 GHz; 3.6 V; 30 percent; BiCMOS process; RFIC; Si; adjacent-channel-power ratio; bias impedance control; mobile phone handset; monolithic Si PCS-CDMA power amplifier; output power; power-added efficiency; Capacitors; Impedance; Inductors; Multiaccess communication; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Telephone sets; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.942566

Filename

942566