Title :
Characterisation of rhenium Schottky contacts on n-type Alx Fa1-xN
Author :
Zhou, L. ; Ping, A.T. ; Boutros, K. ; Redwing, J. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
4/29/1999 12:00:00 AM
Abstract :
The electrical characteristics of Re Schottky contacts on Alx Ga1-xN (x=0, 0.15, 0.22 and 0.26) grown by MOCVD on sapphire substrates have been investigated. The effective barrier heights were obtained from current-voltage and capacitance-voltage measurements and were found to increase with aluminium concentration
Keywords :
III-V semiconductors; MOCVD; Schottky barriers; aluminium compounds; characteristics measurement; gallium compounds; rhenium; semiconductor device measurement; MOCVD; Re-AlGaN; Schottky contacts; capacitance-voltage measurements; current-voltage measurements; effective barrier heights; electrical characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990489
