DocumentCode :
1521293
Title :
Implantation approach to SEU suppression in GaAs
Author :
Dietrich, H.B. ; Kang, Jin U. ; Frankel, Michael Y.
Author_Institution :
Naval Res. Lab., Washington, DC
Volume :
35
Issue :
9
fYear :
1999
fDate :
4/29/1999 12:00:00 AM
Firstpage :
751
Lastpage :
752
Abstract :
It is shown that oxygen-implanted GaAs with oxygen concentrations of 1020 cm-3 (or 1019 cm-3 if co-implanted with Al), annealed in the 500-850°C temperature range, can result in highly resistive layers with subpicosecond free-carrier lifetimes. It is suggested that such layers can be used to suppress single event upsets (SEUs) in GaAs digital circuits
Keywords :
III-V semiconductors; annealing; carrier lifetime; digital integrated circuits; gallium arsenide; ion implantation; oxygen; radiation hardening (electronics); 500 to 850 C; GaAs digital circuits; GaAs:O; SEU suppression; annealing; highly resistive layers; oxygen-implanted GaAs; single event upsets; subpicosecond free-carrier lifetimes;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990512
Filename :
769870
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1521293
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