Title :
Variation of pinch-off modulation with drain bias in MESFETs and HEMTs
Author :
Hutabarat, M.T. ; Webster, D.R. ; Haigh, D.G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fDate :
4/29/1999 12:00:00 AM
Abstract :
A study is presented into the variation of pinch-off modulation with drain bias in MESFETs and HEMTs by observing the gate voltage for which third-order distortion has a null. The results suggest that the pinch-off modulation reverses sign at low drain voltage. Not all CAD models are able to predict this effect
Keywords :
Schottky gate field effect transistors; high electron mobility transistors; semiconductor device measurement; HEMT; MESFET; drain bias; gate voltage; pinch-off modulation variation; third-order distortion null;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990502
