Bistable-Body Tunnel SRAM

Author

Karda, Kamal ; Sutar, Surajit ; Brockman, Jay ; Nahas, Joseph ; Seabaugh, Alan

Author_Institution

Device and Technology Research Group , Micron Technology Inc., Boise, ID, USA

Volume

11

Issue

6

fYear

2012

Firstpage

1067

Lastpage

1072

Abstract

A one-transistor tunnel static random access memory (SRAM) cell is proposed and analyzed. The new cell uses the bistability of a tunnel diode pair to latch the body voltage of a MOSFET that then shifts the threshold voltage and enables sensing of the state by the measurement of the MOSFET transistor current. Band-to-band tunneling is used to write the cell. This cell offers more than 10 000× reduction in static power compared to the 6-transistor (T) SRAM at the 32-nm technology node. A cell size of 48F² is shown, which is comparable to a 6-T SRAM. Access times should be similar to high performance a 6-T SRAM given the same transistor technology.

Keywords

SRAM chips; electric current measurement; tunnel diodes; 6-transistor SRAM; MOSFET transistor current measurement; band-to-band tunneling; bistable-body tunnel SRAM; body voltage; one-transistor tunnel static random access memory cell; size 32 nm; static power; threshold voltage; tunnel diode; Current measurement; Diodes; Leakage current; MOSFET circuits; Multicore processing; Power dissipation; Random access memory; SRAM chips; Threshold voltage; Tin; Static random access memory (SRAM); tunnel SRAM (TSRAM); tunnel diode (TD);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2010.2053555

Filename

5491185