DocumentCode :
1521345
Title :
Floating Gate Memory With Biomineralized Nanodots Embedded in 
Author :
Ohara, Kosuke ; Tojo, Yosuke ; Yamashita, Ichiro ; Yaegashi, Toshitake ; Moniwa, Masahiro ; Yoshimaru, Masaki ; Uraoka, Yukiharu
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan
Volume :
10
Issue :
3
fYear :
2011
fDate :
5/1/2011 12:00:00 AM
Firstpage :
576
Lastpage :
581
Abstract :
Memory properties of a nanodot-type floating gate memory with Co-bio-nanodots (Co-BNDs) embedded in HfO2 were investigated. High density and uniform Co-BNDs were adsorbed on a HfO2 tunnel oxide using ferritin. The fabricated MOS capacitor exhibited a capacitance-voltage curve with large hysteresis. The memory window size was 30 times larger than that of the MOS capacitor with an SiO2 gate oxide. Not only a large memory window but also excellent charge retention and reliability characteristics were obtained for an MOS field-effect transistor. The high-performance nanodot-type floating gate memory was first fabricated at low temperature by utilizing supramolecular protein.
Keywords :
MOS capacitors; MOSFET; biomineralisation; biomolecular electronics; capacitance; cobalt; hafnium compounds; nanoelectronics; nanostructured materials; proteins; Co-HfO2; MOS capacitor; MOS field-effect transistor; biomineralized nanodots; bionanodot embedding; capacitance-voltage curve; charge reliability; charge retention; ferritin; high-performance nanodot-type floating gate memory; memory window size; supramolecular protein; tunnel oxide; FETs; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Large scale integration; MOS capacitors; Nanostructures; Nonvolatile memory; Proteins; Temperature; Bio-nano process; MOS devices; ferritin; floating gate memory; high-$k$
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2010.2053852
Filename :
5491186
Link To Document :
