Title :
218 W quasi-CW operation of 1.83 μm two-dimensional laser diode array
Author :
Maiorov, M. ; Menna, R. ; Khalfin, V. ; Milgaso, H. ; Triano, A. ; Garbuzov, D. ; Connolly, J.
Author_Institution :
Sensors Unlimited Inc., Princeton, NJ, USA
fDate :
4/15/1999 12:00:00 AM
Abstract :
218 W quasi-CW output power has been measured from a 1.83 μm InGaAsP/InP 90 element rack and stack configuration array. Despite strong dependence of the device efficiency on temperature, a CW output power of 54 W has been obtained. The maximum efficiency for CW operation was 18% for 30 W CW output power
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor laser arrays; 1.83 micron; 18 percent; 218 W; InGaAsP-InP; quasi-CW operation; rack and stack configuration; two-dimensional laser diode array;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990317
