High performance of 1.55-μm buried-heterostructure vertical-cavity surface-emitting lasers

Author

Ohiso, Y. ; Okamoto, H. ; Iga, R. ; Kishi, K. ; Tateno, K. ; Amano, C.

Author_Institution

NTT Photonics Labs., Kanagawa, Japan

Volume

13

Issue

9

fYear

2001

Firstpage

918

Lastpage

920

Abstract

We report a record low threshold current of 1.55-μm vertical-cavity surface-emitting laser (VCSEL). Thin-film wafer-fusion technology enables InP-based buried heterostructure VCSELs to be fabricated on GaAs-AlAs distributed Bragg reflectors. Threshold current density is independent of mesa size, and a 5-μm VCSEL exhibits a threshold current as low as 380 μA at 20/spl deg/C and a single transverse mode up to the maximum optical output power under continuous-wave operation.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; indium compounds; laser transitions; optical communication equipment; semiconductor lasers; surface emitting lasers; wafer bonding; 1.55 micron; 20 C; 380 muA; 5 micron; CW operation; GaAs-AlAs; GaAs-AlAs distributed Bragg reflectors; InP-InGaAsP; InP-based buried heterostructure VCSELs; continuous-wave operation; device fabrication; high performance VCSEL; low threshold current; single transverse mode; surface-emitting lasers; thin-film wafer-fusion technology; threshold current density; vertical-cavity lasers; Distributed Bragg reflectors; Indium phosphide; Laser fusion; Laser modes; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Threshold current; Transistors; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.942646

Filename

942646