Title :
Ga2O3(Gd2O3)/GaAs power MOSFETs
Author :
Wang, Y.C. ; Hong, M. ; Kuo, J.M. ; Mannaerts, J.P. ; Tsai, H.S. ; Kwo, J. ; Krajewski, J.J. ; Chen, Y.K. ; Cho, A.Y.
Author_Institution :
Bell Lab., Lucent Technol., Murray Hill, NJ, USA
fDate :
4/15/1999 12:00:00 AM
Abstract :
The power performance of GaAs MOSFETs using Ga2O3 (Gd2O3) as the gate dielectric is presented. The I-V characteristics of the power devices are virtually free of hysteresis, indicating low interface state density in the oxide/GaAs interface. When operated at 850 MHz cellular frequency and tuned for maximum output power, maximum power-added efficiencies of 45 and 56% were obtained under 3 and 5 V operation, respectively. An output power of 26.5 dBm was measured from a 1 μm×2.4 mm device under 5 V operation. These results show that the developed GaAs MOSFETs are promising candidates for microwave power amplifiers
Keywords :
III-V semiconductors; UHF field effect transistors; dielectric thin films; gadolinium compounds; gallium arsenide; gallium compounds; interface states; microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor-insulator boundaries; 3 V; 45 percent; 5 V; 56 percent; 850 MHz; Ga2O3(Gd2O3) gate dielectric; Ga2O3(Gd2O3)-GaAs; GaAs MOSFETs; I-V characteristics; UHF cellular frequency; low interface state density; microwave power amplifier application; oxide/GaAs interface; power MOSFETs; power performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990456
