High reproducibility for deep-quantum-well resonant tunnelling diodes grown by metal organic chemical vapour deposition

Author

Mirabedini, A.R. ; Mawst, L.J. ; Botez, D. ; Marsland, R.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

Volume

35

Issue

8

fYear

1999

fDate

4/15/1999 12:00:00 AM

Firstpage

669

Lastpage

670

Abstract

Deep-quantum-well AlGaAs-InGaAs-GaAs resonant tunnelling diodes (RTDs), relying on resonant tunnelling through the second energy level of the quantum well, are found to have significantly lower sensitivity to the possible variations in thickness of the barriers than conventional devices: the peak current density of deep-quantum-well structures decreases by a factor of 1.48 for each monolayer increase in the total barrier thickness compared with a factor of 2.27 for state-of-the-art InP-based devices. Thus these structures can be fabricated much more reproducibly than conventional RTDs

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; quantum well devices; resonant tunnelling diodes; semiconductor quantum wells; AlGaAs-InGaAs-GaAs; chemical vapour deposition; deep QW device; deep-quantum-well RTD; high reproducibility; metal organic CVD; peak current density; resonant tunnelling diodes; second energy level; total barrier thickness;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19990446

Filename

771024