• DocumentCode
    1521776
  • Title

    High-performance collector-up InGaP/GaAs heterojunction bipolar transistor with Schottky contact

  • Author

    Girardot, A. ; Henkel, A. ; Delage, S.L. ; diForte-Poisson, M.A. ; Chartier, E. ; Floriot, D. ; Cassette, S. ; Rolland, P.A.

  • Author_Institution
    Lab. Central de Recherches, Thomson-CSF, Orsay, France
  • Volume
    35
  • Issue
    8
  • fYear
    1999
  • fDate
    4/15/1999 12:00:00 AM
  • Firstpage
    670
  • Lastpage
    672
  • Abstract
    The first fabrication and RF characterisation of an InGaP/GaAs single heterojunction bipolar transistor in collector-up topology with Schottky contact are reported. Boron implantation is employed to prevent current injection into the extrinsic base region. Realised devices exhibit FMAX=110 GHz and breakdown voltage BVCE0=16 V. The RF gain of these components appears to be less sensitive to HBT development than standard emitter-up HBTs
  • Keywords
    III-V semiconductors; Schottky barriers; boron; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; ion implantation; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device breakdown; 110 GHz; 16 V; B implantation; InGaP-GaAs; RF characterisation; RF gain; Schottky contact; breakdown voltage; collector-up HBT; fabrication; heterojunction bipolar transistor; high-performance device; power HBT;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990460
  • Filename
    771025
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1521776