Title :
High-performance collector-up InGaP/GaAs heterojunction bipolar transistor with Schottky contact
Author :
Girardot, A. ; Henkel, A. ; Delage, S.L. ; diForte-Poisson, M.A. ; Chartier, E. ; Floriot, D. ; Cassette, S. ; Rolland, P.A.
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay, France
fDate :
4/15/1999 12:00:00 AM
Abstract :
The first fabrication and RF characterisation of an InGaP/GaAs single heterojunction bipolar transistor in collector-up topology with Schottky contact are reported. Boron implantation is employed to prevent current injection into the extrinsic base region. Realised devices exhibit FMAX=110 GHz and breakdown voltage BVCE0=16 V. The RF gain of these components appears to be less sensitive to HBT development than standard emitter-up HBTs
Keywords :
III-V semiconductors; Schottky barriers; boron; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; ion implantation; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device breakdown; 110 GHz; 16 V; B implantation; InGaP-GaAs; RF characterisation; RF gain; Schottky contact; breakdown voltage; collector-up HBT; fabrication; heterojunction bipolar transistor; high-performance device; power HBT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990460
