Title :
Reactive ion etching of gallium nitride by methylchloride/hydrogen
Author :
Dineen, M. ; Thomas, H. ; Humphreys, B. ; McMeekin, S.G.
Author_Institution :
Sch. of Eng., Wales Univ., Cardiff, UK
fDate :
4/15/1999 12:00:00 AM
Abstract :
The authors report on the reactive ion etching (RIE) of gallium nitride (GaN) using methylchloride/hydrogen, (CH3Cl/H2 ). The effect of RF power, total gas flow, pressure and gas ratio chemistry on etch rate were investigated and the optimum process identified. Etch rates of 100 nm/min were obtained using the optimised process conditions
Keywords :
III-V semiconductors; gallium compounds; sputter etching; GaN; gallium nitride; methylchloride/hydrogen gas mixture; reactive ion etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990451
