• DocumentCode
    1521793
  • Title

    Reactive ion etching of gallium nitride by methylchloride/hydrogen

  • Author

    Dineen, M. ; Thomas, H. ; Humphreys, B. ; McMeekin, S.G.

  • Author_Institution
    Sch. of Eng., Wales Univ., Cardiff, UK
  • Volume
    35
  • Issue
    8
  • fYear
    1999
  • fDate
    4/15/1999 12:00:00 AM
  • Firstpage
    673
  • Lastpage
    675
  • Abstract
    The authors report on the reactive ion etching (RIE) of gallium nitride (GaN) using methylchloride/hydrogen, (CH3Cl/H2 ). The effect of RF power, total gas flow, pressure and gas ratio chemistry on etch rate were investigated and the optimum process identified. Etch rates of 100 nm/min were obtained using the optimised process conditions
  • Keywords
    III-V semiconductors; gallium compounds; sputter etching; GaN; gallium nitride; methylchloride/hydrogen gas mixture; reactive ion etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990451
  • Filename
    771027
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1521793