Title :
Simple Method for Extracting Effective Sheet Charge Density Along STI Sidewalls Due to Radiation
Author :
Hu, Zhiyuan ; Liu, Zhangli ; Shao, Hua ; Zhang, Zhengxuan ; Ning, Bingxu ; Chen, Ming ; Bi, Dawei ; Zou, Shichang
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
fDate :
6/1/2011 12:00:00 AM
Abstract :
A first order model of radiation induced narrow-channel effect (RINCE) is developed by applying charge conservation principle to calculate threshold voltage shift due to total ionizing dose (TID) irradiation. The model provides a way for extracting effective sheet charge density along shallow trench isolation (STI) sidewalls.
Keywords :
CMOS integrated circuits; MOSFET; radiation effects; surface charging; RINCE; STI sidewalls; TID irradiation; charge conservation principle; effective sheet charge density; first order model; radiation induced narrow channel effect; shallow trench isolation sidewalls; threshold voltage shift; total ionizing dose; Degradation; Logic gates; MOSFETs; Radiation effects; Substrates; Threshold voltage; CMOS devices; RINCE; sheet charge density; total dose effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2142323
