DocumentCode
1521911
Title
Simple Method for Extracting Effective Sheet Charge Density Along STI Sidewalls Due to Radiation
Author
Hu, Zhiyuan ; Liu, Zhangli ; Shao, Hua ; Zhang, Zhengxuan ; Ning, Bingxu ; Chen, Ming ; Bi, Dawei ; Zou, Shichang
Author_Institution
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
Volume
58
Issue
3
fYear
2011
fDate
6/1/2011 12:00:00 AM
Firstpage
1332
Lastpage
1337
Abstract
A first order model of radiation induced narrow-channel effect (RINCE) is developed by applying charge conservation principle to calculate threshold voltage shift due to total ionizing dose (TID) irradiation. The model provides a way for extracting effective sheet charge density along shallow trench isolation (STI) sidewalls.
Keywords
CMOS integrated circuits; MOSFET; radiation effects; surface charging; RINCE; STI sidewalls; TID irradiation; charge conservation principle; effective sheet charge density; first order model; radiation induced narrow channel effect; shallow trench isolation sidewalls; threshold voltage shift; total ionizing dose; Degradation; Logic gates; MOSFETs; Radiation effects; Substrates; Threshold voltage; CMOS devices; RINCE; sheet charge density; total dose effects;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2011.2142323
Filename
5771575
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