DocumentCode
1522398
Title
VLSI performance metric based on minimum TCAD simulations
Author
Schrom, Gerhard ; De, Vivek ; Selberherr, Siegfried
Author_Institution
Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, A-1040 Vienna, Austria
fYear
1996
Firstpage
1
Lastpage
29
Abstract
A new approach to performance metrology and qualification of digital VLSI processes with TCAD simulations is proposed. The method yields performance data on the system level directly from raw electrical device data obtained with a minimum set of device simulations. The key performance and qualification parameters are identified, pointing out the differences between these and traditional device performance metrics, and the methods to determine these parameters from the device data are described.
Keywords
Computational modeling; Data models; Performance evaluation; Qualifications; Semiconductor process modeling; Very large scale integration;
fLanguage
English
Journal_Title
Technology Computer Aided Design TCAD, Journal of
Publisher
ieee
ISSN
1097-2102
Type
jour
DOI
10.1109/TCAD.1996.6449169
Filename
6449169
Link To Document