Deep-submicrometer DC-to-RF SOI MOSFET macro-model

Author

Infguez, B. ; Raskin, Jean-Pierre ; Demeûs, Laurent ; Nève, Amaury ; Vanhoenacker, Danielle ; Simon, Pascal ; Goffioul, Michaël ; Flandre, Denis

Author_Institution

Lab. de Microelectron., Univ. Catholique de Louvain, Belgium

Volume

48

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

1981

Lastpage

1988

Abstract

We present a submicrometer RF fully depleted SOI MOSFET macro-model based on a complete extrinsic small-signal equivalent circuit and an improved CAD model for the intrinsic device. The delay propagation effects in the channel are modeled by splitting the intrinsic transistor into a series of shorter transistors, for each of which a quasistatic device model can be used. Since the intrinsic device model is charge-based, our RF SOI MOSFET model can be used in both small and large-signal analyses. The model has been validated for frequencies up to 40 GHz and effective channel lengths down to 0.16 μm

Keywords

MOSFET; equivalent circuits; semiconductor device models; silicon-on-insulator; 0.16 micron; 40 GHz; CAD model; deep-submicron fully-depleted RF SOI MOSFET; delay propagation; extrinsic equivalent circuit; intrinsic device; large-signal analysis; macro-model; quasistatic device; small-signal analysis; Capacitance; Cutoff frequency; Delay effects; Equivalent circuits; MOSFET circuits; Microwave circuits; Microwave technology; Performance gain; Propagation delay; Radio frequency;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.944186

Filename

944186