Title :
Deep-submicrometer DC-to-RF SOI MOSFET macro-model
Author :
Infguez, B. ; Raskin, Jean-Pierre ; Demeûs, Laurent ; Nève, Amaury ; Vanhoenacker, Danielle ; Simon, Pascal ; Goffioul, Michaël ; Flandre, Denis
Author_Institution :
Lab. de Microelectron., Univ. Catholique de Louvain, Belgium
fDate :
9/1/2001 12:00:00 AM
Abstract :
We present a submicrometer RF fully depleted SOI MOSFET macro-model based on a complete extrinsic small-signal equivalent circuit and an improved CAD model for the intrinsic device. The delay propagation effects in the channel are modeled by splitting the intrinsic transistor into a series of shorter transistors, for each of which a quasistatic device model can be used. Since the intrinsic device model is charge-based, our RF SOI MOSFET model can be used in both small and large-signal analyses. The model has been validated for frequencies up to 40 GHz and effective channel lengths down to 0.16 μm
Keywords :
MOSFET; equivalent circuits; semiconductor device models; silicon-on-insulator; 0.16 micron; 40 GHz; CAD model; deep-submicron fully-depleted RF SOI MOSFET; delay propagation; extrinsic equivalent circuit; intrinsic device; large-signal analysis; macro-model; quasistatic device; small-signal analysis; Capacitance; Cutoff frequency; Delay effects; Equivalent circuits; MOSFET circuits; Microwave circuits; Microwave technology; Performance gain; Propagation delay; Radio frequency;
Journal_Title :
Electron Devices, IEEE Transactions on
