Title :
Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics
Author :
Yoon, Sung-Min ; Ishiwara, Hiroshi
Author_Institution :
R&D Assoc., Future Electron Devices, Tokyo, Japan
fDate :
9/1/2001 12:00:00 AM
Abstract :
A novel FET-type ferroelectric memory cell with one-transistor, and two-capacitor (1T2C) structure was fabricated and characterized, in which the generation of depolarization field in ferroelectric film during data retention was suppressed by polarizing two ferroelectric capacitors in opposite directions. It was demonstrated that the stored data were nondestructively read-out and their retention time was much longer than that of conventional ferroelectric-gate FET
Keywords :
ferroelectric storage; nondestructive readout; data retention; depolarization field; ferroelectric capacitor; ferroelectric film; ferroelectric gate FET; ferroelectric memory cell; nondestructive read-out; one-transistor two-capacitor structure; polarization field; Capacitors; Character generation; Dielectrics; Electron devices; FETs; Ferroelectric films; Ferroelectric materials; MOSFET circuits; Polarization; Research and development;
Journal_Title :
Electron Devices, IEEE Transactions on
