Title :
Basic feasibility constraints for multilevel CHE-programmed flash memories
Author :
Modelli, Alberto ; Manstretta, Alessandro ; Torelli, Guido
Author_Institution :
Central Res. & Dev., STMicroelectron., Italy
fDate :
9/1/2001 12:00:00 AM
Abstract :
This paper discusses the basic constraints for the feasibility of multilevel (ML) Flash memories, with specific reference to devices programmed by channel hot electron injection. Issues such as programming algorithm, program and read disturb immunity, data retention, and sense circuitry sensitivity are considered. Experimental data concerning the most suited programming algorithm and reliability aspects are given. A guideline for the evaluation of ML storage feasibility is provided, and a simple set of equations for basic constraint estimation is derived
Keywords :
flash memories; hot carriers; channel hot electron injection; data retention; flash memory; multilevel storage; program disturb immunity; programming algorithm; read disturb immunity; reliability; sense circuitry sensitivity; Channel hot electron injection; Circuit stability; Equations; Fabrication; Flash memory; Guidelines; Maximum likelihood estimation; Nonvolatile memory; Research and development; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
