Physical compact modeling and analysis of velocity overshoot in extremely scaled CMOS devices and circuits

Author

Ge, Lixin ; Fossum, Jerry G. ; Liu, Bin

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

Volume

48

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

2074

Lastpage

2080

Abstract

A compact physics-based velocity-overshoot model is developed, implemented in metal oxide semiconductor field-effect transistor (MOSFET) circuit models, verified based on measured current-voltage data and Monte Carlo-simulation results, and demonstrated in performance projections for 25 nm bulk-Si complementary metal-oxide-semiconductor (CMOS). The demonstration, involving predicted current-voltage characteristics and ring-oscillator propagation delays, reveals a significant benefit of velocity overshoot, or quasi-ballistic transport, in extremely scaled nMOS and even pMOS devices, although the on-state currents are well below the ballistic limits. Physical insight afforded by the model reveals why the ballistic limits are not being reached in scaled bulk-Si CMOS technologies

Keywords

CMOS integrated circuits; MOSFET; Monte Carlo methods; integrated circuit modelling; semiconductor device models; 25 nm; MOSFET; Monte Carlo simulation; bulk-Si CMOS circuit; current-voltage characteristics; device scaling; nMOS device; on-state current; pMOS device; physical compact model; quasi-ballistic transport; ring oscillator propagation delay; velocity overshoot; Boltzmann equation; CMOS technology; Current measurement; FETs; MOS devices; MOSFET circuits; Performance analysis; Scattering; Semiconductor device modeling; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.944198

Filename

944198