• DocumentCode
    1522728
  • Title

    Optimum base-doping profile for minimum base transit time considering velocity saturation at base-collector junction and dependence of mobility and bandgap narrowing on doping concentration

  • Author

    Suzuki, Kunihiro

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • Volume
    48
  • Issue
    9
  • fYear
    2001
  • fDate
    9/1/2001 12:00:00 AM
  • Firstpage
    2102
  • Lastpage
    2107
  • Abstract
    We used variational calculus, the trial function, and the iterative procedure method to evaluate the optimum base doping concentration profile that will yield the minimum base transit time τB. All methods were extended to include the velocity saturation at the base collector junction, and the dependence of mobility and bandgap narrowing on the base doping concentration. We showed that all methods produce almost the same τB, although the profiles differ. Among them, the iterative method always produces the minimum τB and variational calculus clearly shows the dependence of τB on physical parameters
  • Keywords
    bipolar transistors; carrier mobility; doping profiles; energy gap; iterative methods; semiconductor device models; variational techniques; bandgap narrowing; base doping profile; base transit time; base-collector junction; bipolar transistor; carrier mobility; doping concentration; iterative method; trial function; variational calculus; velocity saturation; Analytical models; Bipolar transistors; Boundary conditions; Calculus; Doping profiles; Electrons; Iterative methods; Photonic band gap; Semiconductor process modeling; Spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.944202
  • Filename
    944202