DocumentCode :
1522728
Title :
Optimum base-doping profile for minimum base transit time considering velocity saturation at base-collector junction and dependence of mobility and bandgap narrowing on doping concentration
Author :
Suzuki, Kunihiro
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Volume :
48
Issue :
9
fYear :
2001
fDate :
9/1/2001 12:00:00 AM
Firstpage :
2102
Lastpage :
2107
Abstract :
We used variational calculus, the trial function, and the iterative procedure method to evaluate the optimum base doping concentration profile that will yield the minimum base transit time τB. All methods were extended to include the velocity saturation at the base collector junction, and the dependence of mobility and bandgap narrowing on the base doping concentration. We showed that all methods produce almost the same τB, although the profiles differ. Among them, the iterative method always produces the minimum τB and variational calculus clearly shows the dependence of τB on physical parameters
Keywords :
bipolar transistors; carrier mobility; doping profiles; energy gap; iterative methods; semiconductor device models; variational techniques; bandgap narrowing; base doping profile; base transit time; base-collector junction; bipolar transistor; carrier mobility; doping concentration; iterative method; trial function; variational calculus; velocity saturation; Analytical models; Bipolar transistors; Boundary conditions; Calculus; Doping profiles; Electrons; Iterative methods; Photonic band gap; Semiconductor process modeling; Spontaneous emission;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.944202
Filename :
944202
Link To Document :
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