Title :
Analysis of dual-gate LIGBT with gradual hole injection
Author :
Lee, You-Sang ; Lee, Byeong-Hoon ; Lee, Won-Oh ; Han, Min-Koo ; Choi, Yearn-Ik
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
9/1/2001 12:00:00 AM
Abstract :
The device characteristics of a gradual hole injection dual-gate lateral insulated gate bipolar transistor (GHI-LIGBT) is analyzed with the experiment and two-dimensional (2-D) numerical simulation. The hole injection mechanism in the GHI-LIGBT is investigated in detail and the device characteristics of the GHI-LIGBT are studied in terms of the various device parameters such as the p+ injector length and the injection gate length. The hole injection characteristics and latch-up characteristics in the GHI-LIGBT are also presented as a function of temperature. The experimental results demonstrate that an on-state voltage drop in GHI-LIGBT is reduced by 1 V, compared with the conventional SA-LIGBT and the negative resistance regime is eliminated since the injection of holes is initiated at the lower anode voltage. It is also found that the low on-state voltage drop in the GHI-LIGBT can be achieved without sacrificing the inherent high switching speed in shorted anode (SA) LIGBT structures
Keywords :
equivalent circuits; insulated gate bipolar transistors; negative resistance; power semiconductor switches; power transistors; semiconductor device models; 2D numerical simulation; device characteristics; device parameters; dual-gate LIGBT; gradual hole injection; high switching speed; injection gate length; latch-up characteristics; lateral IGBT; lateral insulated gate bipolar transistor; negative resistance regime elimination; on-state voltage drop; p+ injector length; shorted anode LIGBT structures; Anodes; Conductivity; Impedance; Insulated gate bipolar transistors; Low voltage; Numerical simulation; Plasma temperature; Power integrated circuits; Spontaneous emission; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
