Analysis of dual-gate LIGBT with gradual hole injection

Author

Lee, You-Sang ; Lee, Byeong-Hoon ; Lee, Won-Oh ; Han, Min-Koo ; Choi, Yearn-Ik

Author_Institution

Dept. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

48

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

2154

Lastpage

2160

Abstract

The device characteristics of a gradual hole injection dual-gate lateral insulated gate bipolar transistor (GHI-LIGBT) is analyzed with the experiment and two-dimensional (2-D) numerical simulation. The hole injection mechanism in the GHI-LIGBT is investigated in detail and the device characteristics of the GHI-LIGBT are studied in terms of the various device parameters such as the p⁺ injector length and the injection gate length. The hole injection characteristics and latch-up characteristics in the GHI-LIGBT are also presented as a function of temperature. The experimental results demonstrate that an on-state voltage drop in GHI-LIGBT is reduced by 1 V, compared with the conventional SA-LIGBT and the negative resistance regime is eliminated since the injection of holes is initiated at the lower anode voltage. It is also found that the low on-state voltage drop in the GHI-LIGBT can be achieved without sacrificing the inherent high switching speed in shorted anode (SA) LIGBT structures

Keywords

equivalent circuits; insulated gate bipolar transistors; negative resistance; power semiconductor switches; power transistors; semiconductor device models; 2D numerical simulation; device characteristics; device parameters; dual-gate LIGBT; gradual hole injection; high switching speed; injection gate length; latch-up characteristics; lateral IGBT; lateral insulated gate bipolar transistor; negative resistance regime elimination; on-state voltage drop; p⁺ injector length; shorted anode LIGBT structures; Anodes; Conductivity; Impedance; Insulated gate bipolar transistors; Low voltage; Numerical simulation; Plasma temperature; Power integrated circuits; Spontaneous emission; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.944210

Filename

944210