Title :
Optimal ON-resistance versus breakdown voltage tradeoff in superjunction power devices: a novel analytical model
Author :
Strollo, Antonio G M ; Napoli, Ettore
Author_Institution :
Dipartimento di Ingegneria Elettronica, Naples Univ., Italy
fDate :
9/1/2001 12:00:00 AM
Abstract :
A two-dimensional (2-D) analytical model for the calculation of breakdown voltage of recently proposed power super-junction (SJ) devices is presented. The model is able to correctly estimate electric field and breakdown voltage giving a deep insight in the design of SJ structures. Design criteria to minimize ON-resistance for a given breakdown voltage are discussed. Numerical 2-D simulations validate the proposed model
Keywords :
power semiconductor devices; semiconductor device breakdown; semiconductor device models; breakdown voltage; electric field; numerical simulation; on-resistance; superjunction power device; two-dimensional analytical model; Analytical models; Conductivity; Doping; Electrostatic analysis; MOSFET circuits; Numerical simulation; Power MOSFET; Power semiconductor devices; Two dimensional displays; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
