Title :
Measurement of AC parameters of gallium arsenide (GaAs/Ge) solar cell by impedance spectroscopy
Author :
Kumar, R.Anil ; Suresh, M.S. ; Nagaraju, J.
Author_Institution :
ISRO Satellite Centre, Bangalore, India
fDate :
9/1/2001 12:00:00 AM
Abstract :
Measurement of solar cell AC parameters is important for the design of efficient and reliable satellite power systems. In the present study, the AC parameters of Gallium Arsenide (GaAs/Ge) solar cell have been measured using impedance spectroscopy. The cell capacitance, dynamic resistance, and series resistance were measured. The results show that the transition capacitance (CT) is dominant up to 0.9 V and beyond 0.9 V diffusion capacitance is significant
Keywords :
III-V semiconductors; capacitance; elemental semiconductors; equivalent circuits; gallium arsenide; germanium; semiconductor device measurement; solar cells; spectroscopy; AC parameters measurement; GaAs-Ge; GaAs/Ge solar cell; cell capacitance; diffusion capacitance; dynamic resistance; impedance spectroscopy; reliable satellite power systems; series resistance; solar cell AC parameters; transition capacitance; Capacitance; Electrical resistance measurement; Gallium arsenide; Impedance measurement; Photovoltaic cells; Power measurement; Power system dynamics; Power system measurements; Power system reliability; Satellites;
Journal_Title :
Electron Devices, IEEE Transactions on
