Overlooked interfacial silicide-polysilicon gate resistance in MOS transistors

Author

Litwin, Andrej

Author_Institution

Ericsson Microelectron. AB, Stockholm, Sweden

Volume

48

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

2179

Lastpage

2181

Abstract

We discuss a previously overlooked gate resistance (R_g) component in silicided polysilicon-gate metal-oxide-semiconductor field-effect-transistors (MOSFETs). Since the high-frequency properties depend critically on R_g, this has motivated the recent addition of a resistive gate input in the BSIM3v3 MOSFET model. Our TLM results show that the contact resistance between silicide and polysilicon, built into the gate of a typical MOSFET, is of the same magnitude as the silicide sheet resistance. This contact resistance affects model scaling and will dominate R_g in narrow-width and short-channel MOS transistors

Keywords

MOSFET; Schottky barriers; contact resistance; semiconductor device models; semiconductor-metal boundaries; silicon; BSIM3v3 MOSFET model; MOS transistors; MOSFETs; Si; TLM results; contact resistance; high-frequency properties; interfacial silicide-polysilicon gate resistance; model scaling; narrow-width devices; short-channel devices; CMOS technology; Circuits; Conductivity; Contact resistance; Electrical resistance measurement; MOSFETs; Radio frequency; Semiconductor device modeling; Silicides; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.944214

Filename

944214