Title :
Carbon-nanotube-based triode-field-emission displays using gated emitter structure
Author :
Ito, Fuminori ; Tomihari, Yoshinori ; Okada, Yuko ; Konuma, Kazuo ; Okamoto, Akihiko
Author_Institution :
Silicon Syst. Res. Lab., NEC Corp., Kanagawa, Japan
Abstract :
We fabricated a carbon-nanotube-based triode-field-emission display with a gated emitter structure made up of a gate layer, a thin insulating layer, and a carbon nanotube layer. A low threshold voltage of 20 V and a total anode current of 0.5 mA at 80 V were observed for 30/spl times/30 pixel panels. We also demonstrated highly efficient and homogeneous emission from all pixels at voltages lower than 100 V. Based on simulation of electric fields in gate holes, further improvement of the emission properties is expected by optimizing its structural parameters, such as the gate-hole diameter.
Keywords :
carbon nanotubes; current density; electron field emission; field emission displays; triodes; 0.5 mA; 20 to 80 V; C; C-nanotube-based triode-field-emission displays; carbon nanotube layer; efficient homogeneous emission; electric field simulation; gate layer; gate-hole diameter; gated emitter structure; structural parameters; thin insulating layer; threshold voltage; total anode current; Anodes; Carbon nanotubes; Cathodes; Displays; Electrodes; Glass; Insulation; Protection; Surface treatment; Voltage;
Journal_Title :
Electron Device Letters, IEEE
