Carbon-nanotube-based triode-field-emission displays using gated emitter structure

Author

Ito, Fuminori ; Tomihari, Yoshinori ; Okada, Yuko ; Konuma, Kazuo ; Okamoto, Akihiko

Author_Institution

Silicon Syst. Res. Lab., NEC Corp., Kanagawa, Japan

Volume

22

Issue

9

fYear

2001

Firstpage

426

Lastpage

428

Abstract

We fabricated a carbon-nanotube-based triode-field-emission display with a gated emitter structure made up of a gate layer, a thin insulating layer, and a carbon nanotube layer. A low threshold voltage of 20 V and a total anode current of 0.5 mA at 80 V were observed for 30/spl times/30 pixel panels. We also demonstrated highly efficient and homogeneous emission from all pixels at voltages lower than 100 V. Based on simulation of electric fields in gate holes, further improvement of the emission properties is expected by optimizing its structural parameters, such as the gate-hole diameter.

Keywords

carbon nanotubes; current density; electron field emission; field emission displays; triodes; 0.5 mA; 20 to 80 V; C; C-nanotube-based triode-field-emission displays; carbon nanotube layer; efficient homogeneous emission; electric field simulation; gate layer; gate-hole diameter; gated emitter structure; structural parameters; thin insulating layer; threshold voltage; total anode current; Anodes; Carbon nanotubes; Cathodes; Displays; Electrodes; Glass; Insulation; Protection; Surface treatment; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.944328

Filename

944328