The recovery behavior of semi-insulating GaAs in electron-beam-controlled switches

Semi-insulating GaAs is experimentally studied with respect to its application in electron-beam-controlled switches. The dark current through the switch is measured both before and after electron-beam irradiation. A lock-on effect, similar to that seen in photoconductive switches, is observed after the electron beam is terminated. This effect is characterized by the switch current continuing to flow, locked to a certain voltage, as long as the voltage is applied across the switch. A possible explanation for this effect, based on the process of electron and hole injection at the contacts, is presented. A method to minimize double injection is offered to make the electron-beam-controlled switch, along with the photoconductive switch, practical for use as both an opening and closing switch