35-kV GaAs subnanosecond photoconductive switches

Author

Pocha, Michael D. ; Druce, Robert L.

Author_Institution

Lawrence Livermore Nat. Lab., CA, USA

Volume

37

Issue

12

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

2486

Lastpage

2492

Abstract

High-voltage, fast-pulse generation using GaAs photoconductive switches is investigated. It is possible to generate 35-kV pulses with risetimes as short as 135 ps using 5-mm gap switches, and electric field hold-off of greater than 100 kV/cm is achieved. An approximately 500-ps FWHM on/off electrical pulse is generated with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier lifetimes. Experimental results are described, and fabrication of switches and the diagnostics used to measure these fast signals are discussed. Experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs is also described

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; photoconducting devices; semiconductor switches; 135 ps; 35 kV; 500 ps; FWHM on/off electrical pulse; GaAs; avalanche modes; carrier lifetimes; diagnostics; electric field hold-off; fast-pulse generation; neutron irradiation; nonlinear lock-on; risetimes; subnanosecond photoconductive switches; Communication switching; Gallium arsenide; High power microwave generation; Laser mode locking; Optical pulse generation; Optical switches; Photoconductivity; Photonic band gap; Pulse generation; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.64522

Filename

64522