Title :
35-kV GaAs subnanosecond photoconductive switches
Author :
Pocha, Michael D. ; Druce, Robert L.
Author_Institution :
Lawrence Livermore Nat. Lab., CA, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
High-voltage, fast-pulse generation using GaAs photoconductive switches is investigated. It is possible to generate 35-kV pulses with risetimes as short as 135 ps using 5-mm gap switches, and electric field hold-off of greater than 100 kV/cm is achieved. An approximately 500-ps FWHM on/off electrical pulse is generated with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier lifetimes. Experimental results are described, and fabrication of switches and the diagnostics used to measure these fast signals are discussed. Experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs is also described
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; photoconducting devices; semiconductor switches; 135 ps; 35 kV; 500 ps; FWHM on/off electrical pulse; GaAs; avalanche modes; carrier lifetimes; diagnostics; electric field hold-off; fast-pulse generation; neutron irradiation; nonlinear lock-on; risetimes; subnanosecond photoconductive switches; Communication switching; Gallium arsenide; High power microwave generation; Laser mode locking; Optical pulse generation; Optical switches; Photoconductivity; Photonic band gap; Pulse generation; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
