• DocumentCode
    1523036
  • Title

    Photoconductive nanosecond pulse generation utilizing radial transmission lines

  • Author

    Kim, A.H. ; Weiner, Maurice ; Zeto, R. ; Youmans, R. ; Jasper, Louis J., Jr. ; Lalevic, B.

  • Author_Institution
    US Army Electron. Technol. & Devices Lab., LABCOM, Ft. Monmouth, NJ, USA
  • Volume
    37
  • Issue
    12
  • fYear
    1990
  • fDate
    12/1/1990 12:00:00 AM
  • Firstpage
    2506
  • Lastpage
    2510
  • Abstract
    A nanosecond, kilovolt pulse generator utilizing a radial transmission line was investigated. The device incorporates a gallium arsenide, photoconductive switch to connect the radial line to the coaxial output. Identical gridded electrodes are used on opposite sides of the switch. Switching is achieved with a 75-ps-wide pulse from a mode-locked Nd:YAG laser. In addition to the radial design, a quasi-radial structure was also investigated, in which improvements in rise time and pulsewidth were achieved at the expense of voltage gain. For the same charging voltage of 9.2 kV, the radial device delivered a 10-kV, 1.3-ns-wide pulse, while the quasi-radial device gave a 6-kV, 500-ps-wide pulse. An integrated pulser design in which the switch and the dielectric medium between conducting planes are combined into a single semi-insulating GaAs wafer is described. The potential advantages of such a device are discussed
  • Keywords
    III-V semiconductors; coaxial cables; gallium arsenide; photoconducting devices; pulse generators; semiconductor switches; transmission lines; 1.3 ns; 10 kV; 500 ps; 6 kV; 75 ps; GaAs; YAG:Nd; YAl5O12:Nd; coaxial output; conducting planes; dielectric medium; gridded electrodes; integrated pulser design; kilovolt pulse generator; mode-locked laser; photoconductive switch; pulsewidth; quasi-radial structure; radial transmission lines; rise time; Coaxial components; Electrodes; Gallium arsenide; Optical pulses; Photoconducting devices; Photoconductivity; Pulse generation; Switches; Transmission lines; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.64525
  • Filename
    64525