Title :
Photoconductive switching in diamond under high bias field
Author :
Feng, Shangting ; Ho, P.-T. ; Goldhar, Julius
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
The limits of high-power, high-repetition-rate operation of photoconductive switches utilizing diamond are explored. To evaluate diamond as a photoconductor for high-power switching applications, the following experiments were performed: (1) measurement of switch resistance as a function of the bias electric field; (2) measurement of switch resistance as a function of laser intensity; (3) measurement of dependence of photoconductive response on the polarity of illuminated contact; and (4) evaluation of high repetition rate switching by using multiple laser pulse excitation
Keywords :
diamond; elemental semiconductors; photoconducting devices; semiconductor switches; C; bias electric field; high bias field; high-power switching applications; laser intensity; multiple laser pulse excitation; photoconductive switches; photoconductor; polarity; switch resistance; Contact resistance; Electric resistance; Electric variables measurement; Electrical resistance measurement; Laser excitation; Optical pulses; Performance evaluation; Photoconductivity; Pulse measurements; Switches;
Journal_Title :
Electron Devices, IEEE Transactions on
