Title :
Photoconductive switching using polycrystalline ZnSe
Author :
Ho, P.-T. ; Peng, Feng ; Goldhar, Julius
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
Photoconductive switching was investigated using polycrystalline ZnSe illuminated by a Coumarine 480 dye laser pumped by an excimer laser. An intracavity grating was used to tune the dye laser wavelength to maximize the output voltage. High mobility (>900 cm2/V-s), a carrier lifetime under 1 ns, and operation at DC bias fields of 45 kV/cm were observed
Keywords :
II-VI semiconductors; photoconducting devices; semiconductor switches; zinc compounds; Coumarine 480 dye laser; DC bias fields; ZnSe; carrier lifetime; excimer laser; intracavity grating; mobility; output voltage; photoconductive switching; Conducting materials; Gallium arsenide; Laser tuning; Photoconducting materials; Photoconductivity; Pump lasers; Semiconductor materials; Switches; Voltage; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
