Title :
A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs
Author :
Shigematsu, Hisao ; Sato, Masaru ; Suzuki, Toshihide ; Takahashi, Tsuyoshi ; Imanishi, Kenji ; Hara, Naoki ; Ohnishi, Hiroaki ; Watanabe, Yuu
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
9/1/2001 12:00:00 AM
Abstract :
This paper describes a new preamplifier IC with 0,15-μm gate InP-based high electron mobility transistors (HEMTs) for a high-speed fiber optic communication system. The preamplifier consists of a lumped-element transimpedance amplifier (TIA) for the input stage and a highly stabilized distributed amplifier with cascode-configured unit cells for the gain stage. A gain-peaking technique for a distributed amplifier was employed to enhance the bandwidth and gain flatness of the preamplifier. This gain peaking profile compensates for a lack of bandwidth of a TIA. As a result, we achieved a flat transimpedance gain of 52 dBΩ and a bandwidth of 49 GHz
Keywords :
HEMT integrated circuits; III-V semiconductors; distributed amplifiers; field effect analogue integrated circuits; high-speed integrated circuits; indium compounds; optical receivers; preamplifiers; wavelength division multiplexing; 0.15 micron; 49 GHz; HEMTs; InP; bandwidth; cascode-configured unit cells; distributed amplifier; flat transimpedance gain; gain flatness; gain-peaking technique; high-speed fiber optic communication system; lumped-element transimpedance amplifier; preamplifier; Bandwidth; Circuits; Distributed amplifiers; Gain; HEMTs; Indium phosphide; MODFETs; Optical fiber communication; Preamplifiers; Wavelength division multiplexing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
