• DocumentCode
    1523246
  • Title

    Technology developments driving an evolution of cellular phone power amplifiers to integrated RF front-end modules

  • Author

    Jos, Rik

  • Author_Institution
    Philips Discrete Semicond., Nijmegen, Netherlands
  • Volume
    36
  • Issue
    9
  • fYear
    2001
  • fDate
    9/1/2001 12:00:00 AM
  • Firstpage
    1382
  • Lastpage
    1389
  • Abstract
    Millions of cellular phone power amplifiers (PAs) are produced every day worldwide using a great diversity of technologies. This is true both for the active devices, where various silicon as well as GaAs transistors are used, and for the PA architecture, in which MMIC, module, and discrete solutions compete. This paper gives an overview of the various technological and architectural choices and discusses their influence on the PA performance, notably the power efficiency and linearity. It sketches the future of PA development toward more functional integration, which may be obtained by two paths: integration on chip and added functionality in modules
  • Keywords
    cellular radio; power amplifiers; radiofrequency amplifiers; telephone sets; MMIC; PA architecture; PA module; RF front-end technology; active device; cellular phone; discrete transistor; functional integration; linearity; power amplifier; power efficiency; Cellular phones; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; MMICs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon germanium;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.944667
  • Filename
    944667