Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Author

Joh, Jungwoo ; del Alamo, Jesús A. ; Chowdhury, Uttiya ; Chou, Tso-Min ; Tserng, Hua-Quen ; Jimenez, Jose L.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA

Volume

56

Issue

12

fYear

2009

Firstpage

2895

Lastpage

2901

Abstract

In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (I _Dmax and R _ON) with a synchronized pulsed I -V setup. As our technique involves only electrical measurement, no special design in device geometry is required, and packaged devices can be measured. We apply this technique to different device structures and validate its sensitivity and robustness.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device measurement; semiconductor device reliability; temperature measurement; wide band gap semiconductors; GaN; HEMT; channel temperature; electrical measurement; high-electron mobility transistors; Electric variables measurement; Gallium nitride; Geometry; HEMTs; MODFETs; Packaging; Performance evaluation; Pulse measurements; Robustness; Temperature measurement; Channel temperature; GaN; high-electron mobility transistors (HEMTs); junction temperature; measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2032614

Filename

5299054