Title :
A comparison of GaN, Si and GaAs power amplifiers
Author :
Kizilbey, O. ; Palamutcuogullari, O.
Author_Institution :
RF Sistemleri Birimi, Tubitak Bilgem, Kocaeli, Turkey
Abstract :
Power amplifiers (PAs) are used in the wide range of electronics such as RADAR, base stations, jammers and cable TV applications. These amplifiers can achieve design specifications like high efficiency and high output power (>20 W) as much as the capability of the transistor. For this reason; Si LDMOSFETs, GaN HEMTs and GaAs HFETs are advancing their place in the market. In this article; GaN, Si, and GaAs power transistor technologies will be compared and an assessment will be made about which one is leading the market by 2014.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; high electron mobility transistors; power MOSFET; power amplifiers; silicon; wide band gap semiconductors; GaAs; GaN; HEMTs; HFETs; LDMOSFETs; Si; base stations; cable TV applications; design specifications; jammers; power amplifiers; power transistor technology; radar; transistor; Gallium arsenide; Gallium nitride; Microwave amplifiers; Microwave circuits; Power amplifiers; Radio frequency; Silicon; GaAs; GaN; Power amplifier; Si;
Conference_Titel :
Signal Processing and Communications Applications Conference (SIU), 2014 22nd
Conference_Location :
Trabzon
DOI :
10.1109/SIU.2014.6830281
