Title :
pulse lasing at 1.56 μm of all-monolithic InGaAlAs-InP vertical cavity lasers
Author :
Kazmierski, C. ; Debray, J.P. ; Madani, R. ; Sagnes, I. ; Ougazzaden, A. ; Bouadma, N. ; Etrillard, J. ; Alexandre, F. ; Quillec, M.
Author_Institution :
Groupement d´´Interet Econ., OPTO+, Marcoussis, France
fDate :
5/13/1999 12:00:00 AM
Abstract :
Using an InP lattice matched InGaAlAs/InAlAs system, an all-monolithic vertical laser structure has been grown. Pulsed lasing at 1.56 μm has been obtained up to +55°C with 45 μm diameter proton-implanted diodes. A thermal resistance of ~420 K/W has been estimated. The reported characterisations indicate the potential of this system laser for CW operation and for simple large-scale processing
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; semiconductor lasers; surface emitting lasers; 1.56 mum; 55 C; CW operation; InGaAlAs-InP; InGaAlAs-InP vertical cavity lasers; all-monolithic; large-scale processing; lattice matched; proton-implanted diodes; pulsed lasing; thermal resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990533
